Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer

Show full item record

Title: Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
Date: 2000
Citation: Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2000). Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer. U.S. Patent No. 6,051,849. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/822


Files in this item

Files Size Format View
US_6051849_A_I.pdf 74.37Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record