Power semiconductor devices having improved high frequency switching and breakdown characteristics

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Title: Power semiconductor devices having improved high frequency switching and breakdown characteristics
Date: 1999
Citation: Baliga, B. J. (1999). Power semiconductor devices having improved high frequency switching and breakdown characteristics. U.S. Patent No. 5,998,833. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/836


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