Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well
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2000
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Schetzina, J. F. (2000). Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well. U.S. Patent No. 6,046,464. Washington, DC: U.S. Patent and Trademark Office.
