Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

Show full item record

Title: Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
Date: 2001
Citation: Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2001). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 6,177,688. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/844


Files in this item

Files Size Format View
US_6177688_B1_I.pdf 75.31Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record