Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
| Title: | Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates |
| Date: | 2001 |
| Citation: | Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2001). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 6,177,688. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/844 |
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