Methods of forming a plurality of semiconductor layers using spaced trench arrays
| Title: | Methods of forming a plurality of semiconductor layers using spaced trench arrays |
| Date: | 2001 |
| Citation: | Gehrke, T., Linthicum, K. J., & Davis, R. F. (2001). Methods of forming a plurality of semiconductor layers using spaced trench arrays. U.S. Patent No. 6,261,929. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/874 |
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| US_6261929_B1_I.pdf | 72.31Kb |
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