Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

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Title: Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
Date: 2001
Citation: Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2001). Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby. U.S. Patent No. 6,255,198. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/877


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