Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
| dc.date.accessioned | 2008-07-21T21:54:32Z | |
| dc.date.available | 2008-07-21T21:54:32Z | |
| dc.date.issued | 2001 | |
| dc.identifier.citation | Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2001). Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby. U.S. Patent No. 6,255,198. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/877 | |
| dc.format.extent | 88358 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby | |
| dc.type | Patent |
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| Files | Size | Format | View |
|---|---|---|---|
| US_6255198_B1_I.pdf | 86.28Kb |
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