Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby

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dc.date.accessioned 2008-07-21T21:54:32Z
dc.date.available 2008-07-21T21:54:32Z
dc.date.issued 2001
dc.identifier.citation Linthicum, K. J., Gehrke, T., Davis, R. F., Thomson, D. B., & Tracy, K. M. (2001). Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby. U.S. Patent No. 6,255,198. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/877
dc.format.extent 88358 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
dc.type Patent


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