Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby

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dc.date.accessioned 2008-07-23T13:33:28Z
dc.date.available 2008-07-23T13:33:28Z
dc.date.issued 2002
dc.identifier.citation Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby. U.S. Patent No. 6,376,339. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/900
dc.format.extent 78133 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, ang gallium nitratde semiconductor structures fabricated thereby
dc.type Patent


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