High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

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Title: High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
Date: 2002
Citation: Gehrke, T., Linthicum, K. J., Davis, R. F., & Thomson, D. B. (2002). High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates. U.S. Patent No. 6,489,221. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/909


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