Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
| Title: | Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes |
| Date: | 2001 |
| Citation: | Brousseau, L. C., III. (2001). Single electron transistors in which the thickness of an insulating layer defines spacing between electrodes. U.S. Patent No. 6,483,125. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/912 |
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|---|---|---|---|
| US_6483125_B1_I.pdf | 76.13Kb |
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