Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates

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Title: Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates
Date: 2002
Citation: Linthicum, K. J., Gehrke, T., Thomson, D. B., Carlson, E. P., Rajagopal, P., & Davis, R. F. (2002). Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substrates. U.S. Patent No. 6,462,355. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/913


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