Methods of fabricating single electron transistors in which the thickness of an insulating layer defines spacing between electrodes

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Title: Methods of fabricating single electron transistors in which the thickness of an insulating layer defines spacing between electrodes
Date: 2004
Citation: Brousseau, L. C., III. (2004). Methods of fabricating single electron transistors in which the thickness of an insulating layer defines spacing between electrodes. U.S. Patent No. 6,784,082. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/921


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