Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth
| Title: | Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth |
| Date: | 2003 |
| Citation: | Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth. U.S. Patent No. 6,602,763. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/922 |
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