Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

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Title: Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth
Date: 2003
Citation: Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth. U.S. Patent No. 6,602,763. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/922


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