Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth
| Title: | Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth |
| Date: | 2003 |
| Citation: | Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth. U.S. Patent No. 6,602,763. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/922 |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| US_6602763_B2_I.pdf | 73.95Kb |
View/ |