Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth

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dc.date.accessioned 2008-07-23T15:27:40Z
dc.date.available 2008-07-23T15:27:40Z
dc.date.issued 2003
dc.identifier.citation Davis, R. F., Nam, O.-H., Zheleva, T., & Bremser, M. D. (2003). Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth. U.S. Patent No. 6,602,763. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.uri http://www.lib.ncsu.edu/resolver/1840.2/922
dc.format.extent 75731 bytes
dc.format.mimetype application/pdf
dc.language.iso en
dc.title Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth
dc.type Patent


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