Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts
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2003
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Linthicum, K. J., Gehrke, T., & Davis, R. F. (2003). Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts. U.S. Patent No. 6,586,778. Washington, DC: U.S. Patent and Trademark Office.
