Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby

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2004

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Gehrke, T., Linthicum, K. J., & Davis, R. F. (2004). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 6,686,261. Washington, DC: U.S. Patent and Trademark Office.

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