Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby
| dc.date.accessioned | 2008-07-23T15:43:59Z | |
| dc.date.available | 2008-07-23T15:43:59Z | |
| dc.date.issued | 2003 | |
| dc.identifier.citation | Gehrke, T., Linthicum, K. J., & Davis, R. F. (2003). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby. U.S. Patent No. 6,545,300. Washington, DC: U.S. Patent and Trademark Office. | |
| dc.identifier.uri | http://www.lib.ncsu.edu/resolver/1840.2/942 | |
| dc.format.extent | 69054 bytes | |
| dc.format.mimetype | application/pdf | |
| dc.language.iso | en | |
| dc.title | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated thereby | |
| dc.type | Patent |
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| Files | Size | Format | View |
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| US_6545300_B2_I.pdf | 67.43Kb |
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