Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates

Show full item record

Title: Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
Date: 2003
Citation: Gehrke, T., Linthicum, K. J., & Davis, R. F. (2003). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates. U.S. Patent No. 6,521,514. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/951


Files in this item

Files Size Format View
US_6521514_B1_I.pdf 80.24Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record