Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
| Title: | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
| Date: | 2003 |
| Citation: | Gehrke, T., Linthicum, K. J., & Davis, R. F. (2003). Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates. U.S. Patent No. 6,521,514. Washington, DC: U.S. Patent and Trademark Office. |
| URI: | http://www.lib.ncsu.edu/resolver/1840.2/951 |
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