Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors

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Title: Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors
Date: 2003
Citation: Maria, J.-P., & Kingon, A. I. (2003). Lanthanum oxide-based gate dielectrics for integrated circuit field effect transistors. U.S. Patent No. 6,531,354. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/953


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