Methods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewalls

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Title: Methods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewalls
Date: 2003
Citation: Zhang, Z. (2003). Methods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewalls. U.S. Patent No. 6,664,143. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/963


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