Gallium nitride semiconductor structure including laterally offset patterned layers

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Title: Gallium nitride semiconductor structure including laterally offset patterned layers
Date: 2003
Citation: Davis, R. F., & Nam, O.-H. (2003). Gallium nitride semiconductor structure including laterally offset patterned layers. U.S. Patent No. 6,608,327. Washington, DC: U.S. Patent and Trademark Office.
URI: http://www.lib.ncsu.edu/resolver/1840.2/971


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