4H-SiC Trench-Gate MOSFET: Practical Surface-Channel Mobility Extraction.

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Title: 4H-SiC Trench-Gate MOSFET: Practical Surface-Channel Mobility Extraction.
Author: Harmon, Jeffrey Lee
Advisors: B. Baliga, Chair
Stephen Michielsen, Graduate School Representative
John Muth, Member
John Veliadis, Member
Veena Misra, Member
Date: 2019-08-23
Degree: Doctor of Philosophy
Discipline: Electrical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.20/36992


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