Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching.

Show full item record

Title: Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching.
Author: Han, Kijeong
Advisors: B. Baliga, Chair
Ramon Collazo, Member
Subhashish Bhattacharya, Member
John Veliadis, Member
Date: 2019-09-12
Degree: Doctor of Philosophy
Discipline: Electrical Engineering
URI: http://www.lib.ncsu.edu/resolver/1840.20/37000


Files in this item

Files Size Format View
etd.pdf 6.771Mb PDF View/Open

This item appears in the following Collection(s)

Show full item record