Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching.
| Title: | Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching. |
| Author: | Han, Kijeong |
| Advisors: | B. Baliga, Chair Ramon Collazo, Member Subhashish Bhattacharya, Member John Veliadis, Member |
| Date: | 2019-09-12 |
| Degree: | Doctor of Philosophy |
| Discipline: | Electrical Engineering |
| URI: | http://www.lib.ncsu.edu/resolver/1840.20/37000 |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| etd.pdf | 6.771Mb |
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