Enhancing Performance of SiC Planar-gate Power MOSFETs with 650 V, 1.2 kV, and 2.3 kV Blocking Voltages with Structural Modifications.

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Title: Enhancing Performance of SiC Planar-gate Power MOSFETs with 650 V, 1.2 kV, and 2.3 kV Blocking Voltages with Structural Modifications.
Author: Agarwal, Aditi
Advisors: B. Baliga, Chair
John Veliadis, Member
Subhashish Bhattacharya, Member
Ramon Collazo, Graduate School Representative
Veena Misra, Member
Date: 2021-06-01
Degree: Doctor of Philosophy
Discipline: Electrical Engineering
URI: https://www.lib.ncsu.edu/resolver/1840.20/38881


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