Enhancing Performance of SiC Planar-gate Power MOSFETs with 650 V, 1.2 kV, and 2.3 kV Blocking Voltages with Structural Modifications.
| Title: | Enhancing Performance of SiC Planar-gate Power MOSFETs with 650 V, 1.2 kV, and 2.3 kV Blocking Voltages with Structural Modifications. |
| Author: | Agarwal, Aditi |
| Advisors: | B. Baliga, Chair John Veliadis, Member Subhashish Bhattacharya, Member Ramon Collazo, Graduate School Representative Veena Misra, Member |
| Date: | 2021-06-01 |
| Degree: | Doctor of Philosophy |
| Discipline: | Electrical Engineering |
| URI: | https://www.lib.ncsu.edu/resolver/1840.20/38881 |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
| etd.pdf | 20.06Mb |
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