High voltage silicon carbide MESFETs and methods of fabricating same

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dc.date.accessioned2008-10-27T15:52:57Z
dc.date.available2008-10-27T15:52:57Z
dc.date.issued1995
dc.format.extent245141 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBaliga, B. J. (1995). High voltage silicon carbide MESFETs and methods of fabricating same. U.S. Patent No. 5399883. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1930
dc.language.isoen
dc.titleHigh voltage silicon carbide MESFETs and methods of fabricating same
dc.typePatent

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