Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications

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dc.date.accessioned2008-02-22T22:35:44Z
dc.date.available2008-02-22T22:35:44Z
dc.date.issued2002
dc.format.extent107267 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationJohnson, R. S., Hong, J. G., Hinkle, C., & Lucovsky, G. (2002). Electron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 20(3), 1126-1131.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/230
dc.language.isoen
dc.titleElectron trapping in noncrystalline remote plasma deposited Hf- aluminate alloys for gate dielectric applications
dc.typeArticle

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