Ultrathin nitride/oxide (N/O) gate dielectrics for p(+)-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD thermal oxidation process

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dc.date.accessioned2008-03-04T01:53:23Z
dc.date.available2008-03-04T01:53:23Z
dc.date.issued1998
dc.format.extent69631 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationWu, Y. D., Lucovsky, G. (1998). Ultrathin nitride/oxide (N/O) gate dielectrics for p(+)-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD thermal oxidation process. IEEE electron device letters, 19(10), 367-369.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/456
dc.language.isoen
dc.titleUltrathin nitride/oxide (N/O) gate dielectrics for p(+)-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD thermal oxidation process
dc.typeArticle

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