Method of making high current, high voltage breakdown field effect transistor

Simple item page
dc.date.accessioned2008-10-24T16:58:39Z
dc.date.available2008-10-24T16:58:39Z
dc.date.issued1993
dc.format.extent251157 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationMishra, U. K., & Trew, R. J. (1993). Method of making high current, high voltage breakdown field effect transistor. U.S. Patent No. 5180681. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1858
dc.language.isoen
dc.titleMethod of making high current, high voltage breakdown field effect transistor
dc.typePatent

Files

Original bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
Method_of_making_high_current__high_volt.pdf
Size:
245.27 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.76 KB
Format:
Plain Text
Description:
Download

Collections

Publications