Investigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance

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dc.date.accessioned2008-04-17T14:43:17Z
dc.date.available2008-04-17T14:43:17Z
dc.date.issued1998
dc.format.extent87709 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationWisniewski, P., Knap, W., Malzac, J. P., Camassel, J., Bremser, M. D., Davis, R. F., Suski, T. (1998). Investigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance. Applied physics letters, 73(13), 1760-1762.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/589
dc.language.isoen
dc.titleInvestigation of optically active E-1 transversal optic phonon modes in AlxGa1-xN layers deposited on 6H-SiC substrates using infrared reflectance
dc.typeArticle

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