Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices

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dc.date.accessioned2008-02-23T16:46:21Z
dc.date.available2008-02-23T16:46:21Z
dc.date.issued1999
dc.format.extent234813 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationLucovsky, G. (1999). Reaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 17(4), 1340-1351.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/273
dc.language.isoen
dc.titleReaction/annealing pathways for forming ultrathin silicon nitride films for composite oxide-nitride gate dielectrics with nitrided crystalline silicon-dielectric interfaces for application in advanced complementary metal-oxide-semiconductor devices
dc.typeArticle

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