Method of forming a laterally-varying charge profile in silicon carbide substrate

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dc.date.accessioned2008-10-16T16:17:57Z
dc.date.available2008-10-16T16:17:57Z
dc.date.issued2000
dc.format.extent134498 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationAlok, D., Taskar, N., & Letavic, T. (2000). Method of forming a laterally-varying charge profile in silicon carbide substrate. U.S. Patent No. 6,096,663. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1649
dc.language.isoen
dc.titleMethod of forming a laterally-varying charge profile in silicon carbide substrate
dc.typePatent

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