Reliable high voltage gate dielectric layers using a dual nitridation process
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2007
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Khamankar, R., Grider, D. T., Niimi, H., Gurba, A., Tran, T., & Chambers, J. J. (2007). Reliable high voltage gate dielectric layers using a dual nitridation process. U.S. Patent No. 7,183,165. Washington, DC: U.S. Patent and Trademark Office.
