Latch-up resistant bipolar transistor with trench IGFET and buried collector

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dc.date.accessioned2008-07-28T17:04:53Z
dc.date.available2008-07-28T17:04:53Z
dc.date.issued1996
dc.format.extent101174 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBaliga, B. J., & Korec, J. (1996). Latch-up resistant bipolar transistor with trench IGFET and buried collector. U.S. Patent No. 5,488,236. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1201
dc.language.isoen
dc.titleLatch-up resistant bipolar transistor with trench IGFET and buried collector
dc.typePatent

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