Power semiconductor devices having trench-based gate electrodes and field plates

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US_6388286_B1_I.pdf (78.23 KB)

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1999

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Baliga, B. J. (1999). Power semiconductor devices having trench-based gate electrodes and field plates. U.S. Patent No. 6,388,286. Washington, DC: U.S. Patent and Trademark Office.

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http://www.lib.ncsu.edu/resolver/1840.2/902

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