Power semiconductor devices having trench-based gate electrodes and field plates

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dc.date.accessioned2008-07-23T13:36:15Z
dc.date.available2008-07-23T13:36:15Z
dc.date.issued1999
dc.format.extent80112 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBaliga, B. J. (1999). Power semiconductor devices having trench-based gate electrodes and field plates. U.S. Patent No. 6,388,286. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/902
dc.language.isoen
dc.titlePower semiconductor devices having trench-based gate electrodes and field plates
dc.typePatent

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