Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity
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2001
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Lucovsky, G. (2001). Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 19(4), 1553-1561.
