Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films

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dc.date.accessioned2008-03-03T20:37:08Z
dc.date.available2008-03-03T20:37:08Z
dc.date.issued2004
dc.format.extent143946 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBae, C., Krug, C., Lucovsky, G., Chakraborty, A., & Mishra, U. (2004). Surface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films. Journal of applied physics, 96(5), 2674-2680.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/407
dc.language.isoen
dc.titleSurface passivation of n-GaN by nitrided-thin-Ga2O3/SiO2 and Si3N4 films
dc.typeArticle

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