Method for forming a p-n junction in silicon carbide
No Thumbnail Available
Date
1994
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Baliga, B. J, Alok, D., & Bhatnagar, M. (1994). Method for forming a p-n junction in silicon carbide. U.S. Patent No. 5,318,915. Washington, DC: U.S. Patent and Trademark Office.