Method for forming a p-n junction in silicon carbide

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dc.date.accessioned2008-07-28T16:50:22Z
dc.date.available2008-07-28T16:50:22Z
dc.date.issued1994
dc.format.extent98374 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationBaliga, B. J, Alok, D., & Bhatnagar, M. (1994). Method for forming a p-n junction in silicon carbide. U.S. Patent No. 5,318,915. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1197
dc.language.isoen
dc.titleMethod for forming a p-n junction in silicon carbide
dc.typePatent

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