Gallium nitride semiconductor structure including laterally offset patterned layers
No Thumbnail Available
Date
2003
Authors
Advisors
Journal Title
Series/Report No.
Journal ISSN
Volume Title
Publisher
Abstract
Description
Keywords
Citation
Davis, R. F., & Nam, O.-H. (2003). Gallium nitride semiconductor structure including laterally offset patterned layers. U.S. Patent No. 6,608,327. Washington, DC: U.S. Patent and Trademark Office.
