Gallium nitride semiconductor structure including laterally offset patterned layers

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dc.date.accessioned2008-07-23T21:17:19Z
dc.date.available2008-07-23T21:17:19Z
dc.date.issued2003
dc.format.extent75962 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationDavis, R. F., & Nam, O.-H. (2003). Gallium nitride semiconductor structure including laterally offset patterned layers. U.S. Patent No. 6,608,327. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/971
dc.language.isoen
dc.titleGallium nitride semiconductor structure including laterally offset patterned layers
dc.typePatent

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