Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications.

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dc.contributor.advisorVeena Misra, Chairen_US
dc.contributor.advisorDan Lichtenwalner, Memberen_US
dc.contributor.advisorLeda Lunardi, Memberen_US
dc.contributor.advisorJohn Muth, Memberen_US
dc.contributor.authorJayanti, Srikanten_US
dc.date.accepted2012-01-04en_US
dc.date.accessioned2012-01-06T06:31:13Z
dc.date.available2012-01-06T06:31:13Z
dc.date.defense2011-12-20en_US
dc.date.issued2011-12-20en_US
dc.date.released2012-01-06en_US
dc.date.reviewed2011-12-21en_US
dc.date.submitted2011-12-20en_US
dc.degree.disciplineElectrical Engineeringen_US
dc.degree.leveldissertationen_US
dc.degree.nameDoctor of Philosophyen_US
dc.identifier.otherdeg1384en_US
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.16/7450
dc.rightsen_US
dc.titleInvestigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications.en_US

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