High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
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1997
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Smith, S. A., Wolden, C. A., Bremser, M. D., Hanser, A. D., Davis, R. F., Lampert, W. V. (1997). High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma. Applied physics letters, 71(25), 3631-3633.
