High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma

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dc.date.accessioned2008-04-17T15:06:48Z
dc.date.available2008-04-17T15:06:48Z
dc.date.issued1997
dc.format.extent118612 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationSmith, S. A., Wolden, C. A., Bremser, M. D., Hanser, A. D., Davis, R. F., Lampert, W. V. (1997). High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma. Applied physics letters, 71(25), 3631-3633.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/597
dc.language.isoen
dc.titleHigh rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
dc.typeArticle

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