Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics

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dc.date.accessioned2008-02-22T23:11:17Z
dc.date.available2008-02-22T23:11:17Z
dc.date.issued1999
dc.format.extent345852 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationNiimi, H., & Lucovsky, G. (1999). Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 17(6), 2610-2621.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/249
dc.language.isoen
dc.titleMonolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked 'N-O-N' gate dielectrics
dc.typeArticle

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