Methods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewalls

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dc.date.accessioned2008-07-23T21:03:48Z
dc.date.available2008-07-23T21:03:48Z
dc.date.issued2003
dc.format.extent82771 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationZhang, Z. (2003). Methods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewalls. U.S. Patent No. 6,664,143. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/963
dc.language.isoen
dc.titleMethods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewalls
dc.typePatent

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