New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing

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dc.date.accessioned2008-02-22T23:36:39Z
dc.date.available2008-02-22T23:36:39Z
dc.date.issued2000
dc.format.extent62126 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationJohnson, R. S., Niimi, H., & Lucovsky, G. (2000). New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing. Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 18(4), 1230-1233.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/263
dc.language.isoen
dc.titleNew approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing
dc.typeArticle

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