Implantation and electrical activation of dopants into monocrystalline silicon carbide

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dc.date.accessioned2008-07-28T15:56:53Z
dc.date.available2008-07-28T15:56:53Z
dc.date.issued1992
dc.format.extent50728 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationEdmond, J. A., & Davis, R. F. (1992). Implantation and electrical activation of dopants into monocrystalline silicon carbide. U.S. Patent No. 5,087,576. Washington, DC: U.S. Patent and Trademark Office.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/1153
dc.language.isoen
dc.titleImplantation and electrical activation of dopants into monocrystalline silicon carbide
dc.typePatent

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