Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy

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dc.date.accessioned2008-02-22T22:46:22Z
dc.date.available2008-02-22T22:46:22Z
dc.date.issued1999
dc.format.extent77484 bytes
dc.format.mimetypeapplication/pdf
dc.identifier.citationKeister, J. W., Rowe, J. E., Kolodziej, J. J., Niimi, H., Madey, T. E., & Lucovsky, G. (1999). Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy. Journal of vacuum science & technology. B, Microelectronics and nanometer structures, 17(4), 1831-1835.
dc.identifier.urihttp://www.lib.ncsu.edu/resolver/1840.2/240
dc.language.isoen
dc.titleBand offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy
dc.typeArticle

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