Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same
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1994
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Schetzina, J. F. (1994). Inverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating same. U.S. Patent No. 5351255. Washington, DC: U.S. Patent and Trademark Office.